收藏本站
NTTFS5820NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
57
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 60 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
6.2
2.3
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
I D = 8.7 A
10.1
11.5
m W
V GS = 4.5 V
I D = 7.3 A
13.0
15
Forward Transconductance
g FS
V DS = 5 V, I D = 10 A
24.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1462
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
150
96
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 48 V, I D = 10 A
28
nC
V GS = 4.5 V, V DS = 48 V, I D = 10 A
15
Threshold Gate Charge
Q G(TH)
1
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = 4.5 V, V DS = 48 V, I D = 10 A
4
8
Plateau Voltage
Gate Resistance
V GP
R G
3
0.62
V
W
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
10
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 48 V,
I D = 10 A, R G = 2.5 W
28
19
22
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 A
T J = 25 ° C
T J = 125 ° C
0.79
0.65
1.2
V
Reverse Recovery Time
t RR
19
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 10 A
13
6
Reverse Recovery Charge
Q RR
15
nC
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTTFS5826NLTWG MOSFET PWR N-CH 60V 20A 8-WDFN
NTTS2P02R2 MOSFET P-CH 20V 2.4A 8MICRO
NTTS2P03R2 MOSFET P-CH 30V 2.1A 8MICRO
NTUD3127CT5G MOSFET N/P-CH 20V SOT-963
NTUD3128NT5G MOSFET N-CH DUAL 20V SOT-963
NTUD3129PT5G MOSFET P-CH DUAL 20V SOT-963
NTUD3169CZT5G MOSFET N/P-CH 20V SOT-963
NTUD3170NZT5G MOSFET N-CH DUAL 20V SOT-963
相关代理商/技术参数
NTTFS5826NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NTTFS5826NL 60 V, 24 m, Single Na??Channel, 8FL
NTTFS5826NLTAG 功能描述:MOSFET NFET U8FL 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTFS5826NLTWG 功能描述:MOSFET NFET U8FL 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTFSC4821NTAG 功能描述:IGBT 晶体管 NFETU8FL 30V 57A 10.8M Ohm RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
NTTFSC4823NTAG 功能描述:IGBT 晶体管 NFETU8FL 30V 50A 17.5MOHM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
NTTS2P02R2 功能描述:MOSFET 20V 2.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTS2P02R2/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.4 Amps， -20 Volts
NTTS2P02R2_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -2.4 Amps, -20 Volts